Properties of hexagonal polytypes of group-IV elements from first-principles calculations.
Raffy, C., Furthmüller, J., Bechstedt, F. Photonics: driving integrated optoelectronics. Science 360, 285–291 (2018).ĪDS MathSciNet CAS PubMed PubMed Central MATHĬheben, P., Halir, R., Schmid, J. Multidimensional quantum entanglement with large-scale integrated optics. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip. Hexagonal SiGe embodies an ideal material system in which to combine electronic and optoelectronic functionalities on a single chip, opening the way towards integrated device concepts and information-processing technologies. Our experimental findings are in excellent quantitative agreement with ab initio theory. Moreover, we demonstrate that, by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned over a broad range, while preserving the direct bandgap. We measure a sub-nanosecond, temperature-insensitive radiative recombination lifetime and observe an emission yield similar to that of direct-bandgap group-III–V semiconductors. Here we demonstrate efficient light emission from direct-bandgap hexagonal Ge and SiGe alloys. The goal 1 of achieving efficient light emission from group-IV materials in silicon technology has been elusive for decades 2, 3, 4, 5, 6.
However, cubic silicon (Si), germanium (Ge) and SiGe alloys are all indirect-bandgap semiconductors that cannot emit light efficiently. Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century.